| PART |
Description |
Maker |
| FCX718 |
Extremely low equivalent on-resistance RCE(sat) 96mù at 2.5A.
|
TY Semiconductor Co., Ltd
|
| FZT853 |
Extremely low equivalent on-resistance; RCE(sat) 44mù at 5A, 6 Amps continuous current, up to 20 Amps peak current
|
TY Semiconductor Co., Ltd
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| FMMT491A |
Very Low Equivalent Resistance, SOT23 NPN Rsilicon planar
|
TY Semiconductor Co., Ltd
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| STD5N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| AP2121AK3.2TRE1 AP2121AN3.2TRE1 AP2121AK1.5TRE1 AP |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| PMR370XN |
N-channel uTrenchMOS extremely low level FET
|
NXP
|
| GFC244 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| AP2121 |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD
|
